The C-V and I-V properties of MgxZnO1-x/n-Si heterojunction | |
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( Volume 2 Issue 8,August 2016 ) OPEN ACCESS | |
Author(s): | |
Abdulazeez O. Mousa, Saleem H. Trier | |
Abstract: | |
In this paper was prepared MgxZnO1-x/n-Si heterojunction by using a chemical spraying pyrolysis (CSP) technique is an easy and convenient way of deposition over large areas. Water used Zn acetate Zn(CH3COO)2.2H2O as a source of ZnO and Mg acetate and water Mg(CH3COO)2.4H2O as a source MgO. The grow mixed solutions MgxZnO1-x different proportions volumetric (0,30,50,70,and 90)% and clean and heated at temperature (450) °C was installed thickness by installing a number of sprays. The thickness of the films between all(80 ±5) nm was used as a gas holder nitrogen electrical properties of MgxZnO1-x/n-Si heterojunciton was studied. The results showed that theMgxZnO1-x/n-Si heterojunciton abrupt type, through measurements (C-V), and increasing width of depletion region with increase the Mg-ctent in films. The electrical properties included on the (C-V) and (I-V) measurements. The built in potential (Vbi) was determined, it was increased with Mg-content increase. |
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