IJEART

In this paper was prepared Mg_xZnO_1-x/n-Si  heterojunction  by using a chemical spraying pyrolysis (CSP) technique is an easy and convenient way of deposition over large areas. Water used Zn acetate Zn(CH₃COO)₂.2H₂O as a source of ZnO and Mg acetate and water Mg(CH₃COO)₂.4H₂O as a source MgO. The grow mixed solutions Mg_xZnO_1-x different proportions volumetric (0,30,50,70,and 90)% and clean and heated at temperature (450) °C was installed thickness by installing a number of sprays. The thickness of the films between all(80 ±5) nm was used as a gas holder nitrogen electrical properties of Mg_xZnO_1-x/n-Si heterojunciton was studied. The results showed that theMg_xZnO_1-x/n-Si heterojunciton abrupt type, through measurements (C-V), and increasing width of depletion region with increase the Mg-ctent in films. The electrical properties included on the (C-V) and (I-V) measurements. The built in potential (V_bi) was determined, it was increased with Mg-content increase.