An Optimization Mechanism for Gallium Nitride Thin Film by using the Numerical Analysis in Blue-LED Process | |
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( Volume 2 Issue 6,June 2016 ) OPEN ACCESS | |
Author(s): | |
Chih-Kai Hu, Chun-Jung Chen, Ta-Chin Wei, Li Ting Tung | |
Abstract: | |
Numerical method is used in the semiconductor industry for the analysis and design of metal organic chemical vapor deposition reactors. The most important issue needed for prediction of epitaxial thin film growth rates and uniformity is the chemistry mechanism occurring in the gas phase and at the surface. Three numerical mechanism models are presented for verifying the growth rate of the gallium nitride (GaN) mechanism, and their results are compared with the growth rate results of previous literature studies. In order to reduce the calculation time of numerical analysis in commercial software, a numerical procedure is performed for simplifying the complicated mechanism of an epitaxial thin-film process through rate of production analysis. All the solution results could be compared in one schematic diagram, and the differences among these three mechanisms are extremely pronounced in high temperatures. The most simplified mechanism can be used to predict the growth rate of a blue-LED process before an actual process begins and it can be easily calculated in a standard computer. This study provides a useful and a predictable mechanism for GaN thin film research in blue-LED process. More verification work is under way by our own experiments. |
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